NAND02G-B2D NUMONYX [Numonyx B.V], NAND02G-B2D Datasheet

NAND02G-B2D

Manufacturer Part Number

NAND02G-B2D

Description

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

Manufacturer

NUMONYX [Numonyx B.V]

Datasheet

1.NAND02G-B2D.pdf (69 pages)

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Features

April 2008

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

High density NAND flash memory

– Up to 2 Gbits of memory array

– Cost-effective solution for mass storage

NAND interface

– x8 or x16 bus width

– Multiplexed address/data

Supply voltage: 1.8 V or 3.0 V device

Page size

– x8 device: (2048 + 64 spare) bytes

– x16 device: (1024 + 32 spare) words

Block size

– x8 device: (128 K + 4 K spare) bytes

– x16 device: (64 K + 2 K spare) words

Multiplane architecture

– Array split into two independent planes

– Program/erase operations can be

Page read/program

– Random access: 25 µs (max)

– Sequential access: 25 ns (min)

– Page program time: 200 µs (typ)

– Multiplane page program time (2 pages):

Copy back program with automatic EDC (error

detection code)

Cache read mode

Fast block erase

– Block erase time: 1.5 ms (typ)

– Multiblock erase time (2 blocks): 1.5 ms

applications

performed on both planes at the same time

200 µs (typ)

(typ)

multiplane architecture, 1.8 V or 3 V, NAND flash memories

Rev 3

2-Gbit, 2112-byte/1056-word page

Table 1.

1. x 16 organization only available for MCP products.

NAND02G-B2D

Status register

Electronic signature

Chip Enable ‘don’t care’

Serial number option

Data protection:

– Hardware program/erase disabled during

– Non-volatile protection option

ONFI 1.0 compliant command set

Data integrity

– 100,000 program/erase cycles (with ECC)

– 10 years data retention

ECOPACK

Reference

power transitions

Device summary

VFBGA63 9.5 x 12 mm (ZA)

TSOP48 12 x 20 mm (N)

packages

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FBGA

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Part number

Preliminary Data

www.numonyx.com

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