NAND02G-B2D NUMONYX [Numonyx B.V], NAND02G-B2D Datasheet - Page 64

• Manufacturer Part Number: NAND02G-B2D
• Description: 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
11.2
64/69
Figure 42. Resistor value versus waveform timings for ready/busy signal
1. T = 25 °C.
Data protection
The Numonyx NAND devices are designed to guarantee data protection during power
transitions.
A V
In the V
low (V
figure.
Figure 43. Data protection
400
300
200
100
DD
0
1
IL
30
1.7
1.7
detection circuit disables all NAND operations, if V
DD
) to guarantee hardware protection during power transitions as shown in the below
V DD
W
range from V
V DD = 1.8 V, C L = 30 pF
Nominal range
2
1.7
0.85
60
R P (KΩ
V LKO
LKO
Locked
3
90
0.57
1.7
to the lower limit of nominal range, the WP pin should be kept
4
t f
1.7
120
0.43
3
2
1
4
Locked
t r
400
300
200
100
0
1
100
3.6
2.4
DD
ibusy
is below the V
V DD = 3.3 V, C L = 100 pF
2
3.6
200
1.2
R P (KΩ
Ai11086
3
LKO
300
3.6
NAND02G-B2D
0.8
threshold.
400
4
ai13640b
3.6
2
1
3
4
0.6