NAND02G-B2D NUMONYX [Numonyx B.V], NAND02G-B2D Datasheet - Page 48

• Manufacturer Part Number: NAND02G-B2D
• Description: 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

Program and erase times and endurance cycles
9
Table 21.
48/69
Page program time
Multiplane program time
Block erase time
Multiplane block erase time
Multiplane program busy time (t
Multiplane erase busy time (t
Cache read busy time (t
Program/erase cycles per block (with ECC)
Data retention
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Program erase times and program erase endurance cycles
Table
Parameters
21.
RCBSY
IEBSY
)
IPBSY
)
)
3.0 V
1.8 V
3.0 V
1.8 V
100,000
Min
10
NAND flash
Typ
200
200
250
1.5
1.5
0.5
0.5
2
3
Max
700
700
800
2.5
t
2
2
1
1
R
NAND02G-B2D
cycles
years
Unit
ms
ms
ms
µs
µs
µs
µs
µs
µs