NAND02G-B2D NUMONYX [Numonyx B.V], NAND02G-B2D Datasheet - Page 38

• Manufacturer Part Number: NAND02G-B2D
• Description: 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

Device operations
6.14
Table 14.
Table 15.
38/69
NAND02GW3B2D
NAND02GW4B2D
Root part number
NAND02GR3B2D
NAND02GR4B2D
I/O1-I/O0
I/O3-I/O2
I/O5-I/O4
I/O6
I/O7
I/O
Read electronic signature
The devices contain a manufacturer code and device code. The following three steps are
required to read these codes:
1.
2.
3.
The device remains in this state until a new command is issued
Electronic signature
Electronic signature byte 3
One bus write cycle to issue the Read Electronic Signature command (90h)
One bus write cycle to input the address (00h)
Five bus read cycles to sequentially output the data (as shown in
signature).
Number of simultaneously
Interleaved programming
between multiple devices
Byte 1
0020h
0020h
Internal chip number
programmed pages
20h
20h
Cache program
Definition
Cell type
Byte 2
DAh
CAh
AAh
BAh
(see
Byte 3
Table
Value
10h
10h
10h
10h
0 0
0 1
1 0
1 1
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0 0
0
1
0
1
15)
(see
Byte 4
Table
D5h
15h
55h
95h
16)
Table 14: Electronic
Not supported
Not supported
Description
16-level cell
2-level cell
4-level cell
8-level cell
Supported
Supported
NAND02G-B2D
(see
1
2
4
8
1
2
4
8
Byte 5
Table
44h
44h
44h
44h
17)