E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 17

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

4.2
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. Addresses are latched on the rising edge of CLK in conjunction with ADV# low. Address A
Latch Read
Address
Inhibit
Latching
Read Address
Read
Output
Disable
Standby
Deep
Power-Down
Manufacturer
ID
Device ID
Write
pins depending on whether or not OE# is active.
RY/BY# output is open drain. When the WSM is ready, Erase is suspended, or the device is in deep power-down mode,
RY/BY# will be at V
is in progress.
RP# at GND ± 0.2V ensures the lowest deep power-down current.
A
codes in x8 and x16 modes respectively. All other addresses are set to zero.
Commands for erase, data program, or lock-block operations can only be completed successfully when V
V
While the WSM is running, RY/BY# stays at V
not busy or in erase suspend mode.
RY/BY# may be at V
program operation).
The 28F016XS shares an identical device identifier with the 28F016XD.
CE
A
X can be V
0
PP
1
Mode
and A
= 1 selects the odd bank, in both byte-wide mode and word-wide mode device configurations.
0–1
= V
# at V
Bus Operations for Byte-Wide Mode (BYTE# = V
PPH2
1
at V
IH
IL
.
is defined as both CE
or V
IL
1,2,7,9
1,6,7,9
1,6,7,9
1,4,8,9
1,5,6,9
provide device manufacturer codes in x8 and x16 modes respectively. A
Notes
1,9,10
1,4,9
IL
1,9
1,3
OH
for address or control pins except for RY/BY#, which is either V
OL
if it is tied to V
while the WSM is busy performing various operations (for example, a Status Register read during a
(until publication date)
INTEL CONFIDENTIAL
RP#
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IL
IH
IH
IH
0
# and CE
CC
CE
4/15/97 9:41 AM
V
V
V
V
V
V
V
V
through a resistor. RY/BY# at V
X
0–1
IH
IL
IL
IL
IL
IL
IL
IL
#
1
OL
# low, and CE
until all operations are complete. RY/BY# goes to V
OE#
V
V
V
V
V
X
X
X
X
IH
IH
IL
IL
IL
WE#
V
V
V
V
V
V
0–1
V
9053204.DOC
X
X
IH
IH
IH
IH
IH
IH
IL
# at V
IH
ADV#
V
V
OH
is defined as either CE
X
X
X
X
X
X
X
IH
IL
is independent of OE# while a WSM operation
CLK
IL
X
X
X
X
)
OL
28F016XS FLASH MEMORY
or V
0
and A
OH
1
V
V
= 0 selects the even bank and
A
X
X
X
X
X
X
X
, or High Z or D
IH
IL
0
0
# or CE
1
at V
High Z
High Z
High Z
OH
DQ
D
IH
A8H
89H
D
1
OUT
X
X
when the WSM is
provide device ID
# high.
IN
0–7
PP
= V
OUT
PPH1
RY/BY#
for data
V
V
V
X
X
X
X
X
X
OH
OH
OH
or
17