E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 47

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

ADDRESSES (A)
NOTE 4
NOTES:
1. This address string depicts data program/erase cycles with corresponding verification via ESRD.
2. This address string depicts data program/erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during data program/erase operations.
4. CE
5. RP# low transition is only to show t
6. Data program/erase cycles are asynchronous; CLK and ADV# are ignored.
7. V
8. V
ADDRESSES (A)
WE# (W)
OE# (G)
CEx#(E)
DATA (D/Q)
RY/BY# (R)
RP# (P)
NOTE 1
NOTE 2
V
PP
NOTE 6
NOTE 6
ADV#
CLK
(V)
PP
PP
V
V
POWER-DOWN
Illustrating a Two Command Write Sequence Followed by an Extended Status Register Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
X
OL
PPLK
IH
IH
IH
IH
IH
IH
IH
PPH1
PPH2
IL
IL
IL
IL
IL
IL
IL
IL
# is defined as the latter of CE
voltage during data program/erase operations valid at both 12.0V and 5.0V .
voltage equal to or below V
DEEP
HIGH Z
t
WLEL
t
PHEL
t
t
DVEH
ERASE SETUP COMMAND
ELEH
WRITE DATA-WRITE OR
NOTE 8
t
t
Figure 16. AC Waveforms for CE
AVAV
AVAV
D
IN
(until publication date)
INTEL CONFIDENTIAL
t
t
EHWH
t
EHDX
EHEL
ERASE CONFIRM COMMAND
& DATA (DATA-WRITE) OR
PPLK
WRITE VALID ADDRESS
t
t
0
AVEH
AVEH
RHPL
# or CE
provides complete flash memory array protection.
A
A
IN
IN
; not valid for above read and program cycles.
D
4/15/97 9:41 AM
IN
t
t
VPEH1
VPEH2
1
# going low or the first of CE
t
t
AUTOMATED DATA-WRITE
EHAX
EHAX
t
OR ERASE DELAY
EHRL
t
EHQV1,2
X
#—Controlled Write Operations,
NOTE 7
9053204.DOC
WRITE READ EXTENDED
REGISTER COMMAND
NOTE 3
0
# or CE
D
IN
t
EHCH
1
# going high.
STATUS REGISTER DATA
STATUS REGISTER DATA
28F016XS FLASH MEMORY
t
READ COMPATIBLE
RHPL
READ EXTENDED
A=RA
D
OUT
t
QVVL1
NOTE 5
t
t
QVVL2
GHEL
D
IN
0532_15
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