E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 33

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

5.6
All 3.3V system timings are measured from where signals cross 1.5V.
For 5.0V systems, use the standard JEDEC cross point definitions (standard testing) or from where signals
cross 1.5V (high speed testing).
Each timing parameter consists of five characters. Some common examples are defined below:
5V
3V
W
Q
G
A
C
D
E
F
P
R
V
Y
t
t
t
ELCH
AVCH
WHDX
Timing Nomenclature
Address Inputs
CLK (Clock)
Data Inputs
Data Outputs
CE# (Chip Enable)
BYTE# (Byte Enable)
OE# (Output Enable)
WE# (Write Enable)
RP# (Deep Power-Down Pin)
RY/BY# (Ready Busy)
ADV# (Address Valid)
3/5# Pin
V
V
time(t) from CE# (E) going low (L) to CLK (C) going high (H)
time(t) from address (A) valid (V) to CLK (C) going high (H)
CC
CC
time(t) from WE# (W) going high (H) to when the data (D) can become undefined (X)
at 4.5V Minimum
at 3.0V Minimum
Pin Characters
(until publication date)
INTEL CONFIDENTIAL
4/15/97 9:41 AM
9053204.DOC
H
V
X
L
Z
L
High
Low
Valid
Driven, but Not Necessarily Valid
High Impedance
Latched
28F016XS FLASH MEMORY
Pin States
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