E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 27

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

5.4
V
3/5# = Pin Set High for 3.3V Operations
CC
Symbol
I
I
I
I
I
I
LI
LO
CCS
CCD
CCR
CCR
= 3.3V ± 5%, T
1
2
DC Characteristics
Input Load Current
Output Leakage
Current
V
V
Power-Down
Current
V
Read Current
V
Read Current
Current
CC
CC
CC
CC
Parameter
Standby
Deep
Word/Byte
Word/Byte
A
= 0°C to +70°C
(until publication date)
INTEL CONFIDENTIAL
Notes
1,4,5
1,4,
1,5
5,6
4/15/97 9:41 AM
1
1
1
Min
Typ
70
65
60
1
2
9053204.DOC
Max
130
85
75
4
5
10
1
Units
mA
mA
mA
µA
µA
µA
µA
28F016XS FLASH MEMORY
V
V
V
V
V
CE
BYTE#, WP#, 3/5# = V
V
CE
BYTE#, WP#, 3/5# = V
RP# = GND
BYTE# = V
V
CMOS: CE
4-Location Access
f = 25 MHz, I
V
CMOS: CE
4-Location Access
f = 16 MHz, I
CC
IN
CC
OUT
CC
CC
CC
CC
0
0.2V
0.2V or GND ± 0.2V
0
V
GND ± 0.2V
± 0.2V, BYTE# = GND ±
0.2V or V
Inputs = GND ± 0.2V or
V
Sequence: 3-1-1-1
(clocks)
± 0.2V, BYTE# = GND ±
0.2V or V
Inputs = GND ± 0.2V or
V
Sequence: 3-1-1-1
(clocks)
= V
#, CE
#, CE
= V
= V
= V
= V
IL
= V
CC
= V
CC
= V
Test Conditions
CC
± 0.2V
± 0.2V
CC
CC
CC
CC
CC
CC
CC
1
1
or GND
#, RP# = V
#, RP# = V
Max
Max
Max
Max
Max
Max
CC
0
0
# ,CE
#, CE
or GND
CC
CC
OUT
OUT
± 0.2V or
0.2V
± 0.2V,
± 0.2V,
= 0 mA
= 0 mA
1
1
# = GND
# = GND
CC
IH
CC
IH
or
27