E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 43

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

ADDRESSES (A)
ADDRESSES (A)
CEx # (E)
OE# (G)
WE# (W)
DATA (D/Q)
RY/BY# (R)
RP# (P)
NOTES:
1. This address string depicts data program/erase cycles with corresponding verification via ESRD.
2. This address string depicts data program/erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during data program/erase operations.
4. CE
5. RP# low transition is only to show t
6. Data program/erase cycles are asynchronous; CLK and ADV# are ignored.
7. V
8. V
NOTE 1
NOTE 2
NOTE 4
V
NOTE 6
PP
NOTE 6
ADV#
CLK
(V)
PP
PP
V
V
POWER-DOWN
Illustrating a Two Command Write Sequence Followed by an Extended Status Register Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
X
OL
PPH2
PPH1
PPLK
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
# is defined as the latter of CE
voltage during data program/erase operations valid at both 12.0V and 5.0V .
voltage equal to or below V
DEEP
HIGH Z
t
t
ELWL
PHWL
t
t
WLWH
ERASE SETUP COMMAND
DVWH
WRITE DATA-WRITE OR
NOTE 8
t
t
AVAV
AVAV
Figure 15. AC Waveforms for WE#—Command Write Operations,
D
IN
(until publication date)
INTEL CONFIDENTIAL
t
t
WHDX
WHEH
t
WHWL
ERASE CONFIRM COMMAND
& DATA (DATA-WRITE) OR
PPLK
WRITE VALID ADDRESS
t
t
0
AVWH
AVWH
RHPL
# or CE
provides complete flash memory array protection.
A
A
IN
IN
; not valid for above read and program cycles.
D
4/15/97 9:41 AM
IN
t
t
VPWH1
VPWH2
1
# going low or the first of CE
t
t
AUTOMATED DATA-WRITE
WHAX
WHAX
t
OR ERASE DELAY
WHRL
t
WHQV1,2
NOTE 7
9053204.DOC
WRITE READ EXTENDED
REGISTER COMMAND
NOTE 3
0
# or CE
D
IN
t
WHCH
1
# going high.
STATUS REGISTER DATA
STATUS REGISTER DATA
28F016XS FLASH MEMORY
t
RHPL
READ COMPATIBLE
READ EXTENDED
A=RA
D
OUT
t
QVVL1
NOTE 5
t
t
QVVL2
GHWL
D
IN
0532_14
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