K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 10

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K9F1208D0B-D

Manufacturer Part Number
K9F1208D0B-D
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Memory Map
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Figure 3. Memory Array Map
528byte Page Registers
Block 4092
Block 4088
Block 0
Block 4
Plane 0
(1024 Block)
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528byte Page Registers
Block 4093
Block 4089
Block 1
Block 5
Plane 1
(1024 Block)
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10
528byte Page Registers
Plane 2
(1024 Block)
Block 4094
Block 4090
Block 2
Block 6
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Page 0
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Page 0
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Page 0
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FLASH MEMORY
528byte Page Registers
Block 4095
Plane 3
(1024 Block)
Block 4091
Block 3
Block 7
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