K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 13

• Manufacturer Part Number: K9F1208D0B-D
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208Q0B
K9F1208D0B
K9F1208U0B
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
(K9F1208X0B-XCB0 :TA=0 to 70 C, K9F1208X0B-XIB0:TA=-40 to 85 C
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F1208Q0B:Output Load (Vcc
K9F1208D0B:Output Load (Vcc
K9F1208U0B:Output Load (Vcc
K9F1208U0B:Output Load (Vcc
K9F1208Q0B : Vcc=1.70V~1.95V , K9F1208D0B : Vcc=2.4V~2.9V , K9F1208U0B : Vcc=2.7V~3.6V unless otherwise noted)
Valid Block Number
Input/Output Capacitance
Input Capacitance
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
cycles.
CLE
H
H
X
X
X
X
X
L
L
L
L
L
device
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
ALE
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
X
H
H
X
X
X
X
L
L
L
L
L
Item
(1)
IL
Parameter
or V
(
T
CE
IH.
X
X
X
X
H
L
L
L
L
L
L
L
A
=25 C, V
Q
Q
Q
Q
:1.8V +/-10%)
:2.65V +/-10%)
:3.0V +/-10%)
:3.3V +/-10%)
WE
H
H
X
X
X
X
X
CC
=1.8V/2.65V/3.3V, f=1.0MHz)
Symbol
Symbol
C
N
C
VB
I/O
RE
IN
H
H
H
H
H
H
H
X
X
X
X
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
0V/V
WP
H
H
H
H
H
X
X
X
X
X
L
Test Condition
K9F1208Q0B
CC
0V to Vcc
(2)
Vcc
V
V
During Read(Busy) on K9F1208X0B-Y,P or K9F1208U0B-V,F
During Read(Busy) on the devices except K9F1208X0B-Y,P and
K9F1208U0B-V,F
4,026
5ns
IN
Data Input
Data Output
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
IL
Min
-
Q
=0V
=0V
Read Mode
Write Mode
/2
13
Q
Command Input
Address Input(4clock)
Command Input
Address Input(4clock)
Typ.
Min
-
-
-
K9F1208D0B
0V to Vcc
Vcc
5ns
-
Q
/2
Mode
Q
FLASH MEMORY
4,096
Max
Max
10
10
1 TTL GATE and CL=100pF
.
Do not erase or program
K9F1208U0B
0.4V to 2.4V
Advance
1.5V
5ns
Blocks
Unit
Unit
pF
pF