K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 44

• Manufacturer Part Number: K9F1208D0B-D
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208Q0B
K9F1208D0B
K9F1208U0B
where I
Rp(max) is determined by maximum permissible limit of tr
Rp value guidance
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp(min, 1.8V part) =
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
100n
100n
200n
100n
200n
300n
200n
300n
300n
V
V
V
CC
CC
CC
(Max.) - V
(Max.) - V
(Max.) - V
2.3
2.4
I
I
I
1.7
1K
1K
OL
OL
OL
1K
30
2.3
100
30
1.7
3.6
@ Vcc = 2.65V, Ta = 25
@ Vcc = 1.8V, Ta = 25
@ Vcc = 3.3V, Ta = 25
+ I
+ I
+ I
Ibusy
Ibusy
Ibusy
tf
tf
tf
OL
OL
OL
tr
tr
tr
L
L
L
(Max.)
(Max.)
(Max.)
60
60
200
0.85
1.2
1.1
2K
2K
2K
2.3
3.6
1.7
Rp(ohm)
Rp(ohm)
Rp(ohm)
44
=
=
=
300
0.75
90
0.8
3K
3K
3K
3.6
2.3
1.7
90
0.57
C , C
C , C
3mA + I
3mA + I
8mA + I
C , C
1.85V
2.5V
3.2V
2.3
L
L
1.7
L
0.6
400
0.43
120
= 100pF
3.6
= 30pF
120
4K
4K
4K
= 30pF
L
L
L
0.55
2m
2m
2m
3m
1m
3m
1m
3m
1m
FLASH MEMORY
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