K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 14

• Manufacturer Part Number: K9F1208D0B-D
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208Q0B
K9F1208D0B
K9F1208U0B
PROGRAM / ERASE CHARACTERISTICS
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Program Time
Dummy Busy Time for Multi Plane Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Parameter
Symbol
Parameter
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALH
ALS
WP
WC
WH
CS
CH
DS
DH
10
10
25
10
20
10
45
15
0
0
0
Spare Array
Main Array
25
Min
10
10
10
20
10
45
15
0
0
0
(1)
Symbol
t
t
t
PROG
Nop
DBSY
BERS
14
25
10
10
10
20
10
45
15
0
0
0
(1)
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
200
1
2
-
-
Max
FLASH MEMORY
-
-
-
-
-
-
-
-
-
-
-
Max
500
10
1
2
3
Advance
-
-
-
-
-
-
-
-
-
-
-
cycles
cycle
Unit
ms
s
s
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns