K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 24

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K9F1208D0B-D

Manufacturer Part Number
K9F1208D0B-D
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Read1 Operation
CLE
CE
WE
ALE
RE
I/O
R/B
Read2 Operation
CLE
CE
WE
ALE
RE
I/O
R/B
X
X
00h or 01h
50h
Column
Address
(Intercepted by CE)
A
(Read One Page)
0
~ A
M Address
7
A
0
A
9
~ A
~ A
A
A
0
4
7
~A
~A
16
3
7
A
Page(Row)
Address
: Valid Address
: Don
9
A
~ A
17
~ A
16
t
care
24
A
17
~ A
A
24
25
t
WB
A
25
24
Busy
t
t
R
WB
t
RR
t
AR
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held
low during tR
Dout N
t
R
Dout N+1
t
t
AR
RC
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held
low during tR
Selected
Row
t
RR
Dout N+2
FLASH MEMORY
t
t
CHZ
OH
Dout
n+M
512
Advance
n+m
address M
Start
16

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