K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 45

• Manufacturer Part Number: K9F1208D0B-D
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208Q0B
K9F1208D0B
K9F1208U0B
Data Protection & Power-up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
required before internal circuit gets ready for any command sequences as shown in Figure 24. The two step command sequence for
program/erase provides additional software protection.
Figure 24. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
10 s
High
IL
during power-up and power-down. A recovery time of minimum 10 s is
45
FLASH MEMORY
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
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