K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 11

• Manufacturer Part Number: K9F1208D0B-D
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208Q0B
K9F1208D0B
K9F1208U0B
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1208X0B-XCB0
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
Parameter
Parameter
Symbol
V
V
V
CCQ
CC
SS
K9F1208X0B-XCB0
K9F1208X0B-XIB0
K9F1208X0B-XCB0
K9F1208X0B-XIB0
SS
1.70
1.70
Min
0
K9F1208Q0B(1.8V)
CC,
Typ.
1.8
1.8
+0.3V which, during transitions, may overshoot to V
0
:
T
A
Symbol
=0 to 70 C, K9F1208X0B-XIB0
V
V
T
T
IN/OUT
V
Ios
Max
1.95
1.95
BIAS
CCQ
STG
CC
0
Min
2.4
2.4
11
0
K9F1208D0B(2.65V)
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
Typ.
2.65
2.65
0
:
T
A
Max
=-40 to 85 C)
2.9
2.9
-10 to +125
-40 to +125
-65 to +150
0
Rating
CC
5
+2.0V for periods <20ns.
Min
2.7
2.7
3.3V/2.65V DEVICE
0
K9F1208U0B(3.3V)
FLASH MEMORY
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
Typ.
3.3
3.3
0
Advance
Max
3.6
3.6
0
Unit
mA
Unit
V
C
C
V
V
V