K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 10

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1GXXX0M-XCB0
Voltage on any pin relative to V
Temperature Under
Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
Parameter
Parameter
Symbol
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
K9F1G16Q0M
K9F1G16D0M
V
V
CC
SS
SS
1.70
Min
K9F1GXXQ0M(1.8V)
0
CC,
+0.3V which, during transitions, may overshoot to V
Typ.
1.8
0
:
T
A
=0 to 70 C, K9F1GXXX0M-XIB0
Symbol
V
T
T
Max
1.95
IN/OUT
V
Ios
BIAS
STG
0
CC
10
Min
K9F1GXXD0M(2.65V)
2.4
0
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
Typ.
2.65
0
Max
2.9
:
T
0
-10 to +125
-40 to +125
-65 to +150
A
=-40 to 85 C)
Rating
CC
+2.0V for periods <20ns.
5
Min
2.7
3.3V/2.65V DEVICE
K9F1GXXU0M(3.3V)
0
FLASH MEMORY
-0.6 to + 4.6
-0.6 to + 4.6
Typ.
3.3
0
Max
3.6
0
Unit
Unit
mA
V
V
V
C
C