K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 17

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
NAND Flash Technical Notes
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
Page 63
Page 31
Page 2
Page 1
Page 0
From the LSB page to MSB page
DATA IN: Data (1)
K9F1G16Q0M
K9F1G16D0M
Data register
(64)
(32)
(3)
(2)
(1)
:
:
(Continued)
Data (64)
17
Page 63
Page 31
Page 2
Page 1
Page 0
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data register
FLASH MEMORY
(64)
(32)
(1)
(3)
(2)
:
:
Data (64)