K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 16

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Erase Flow Chart
NAND Flash Technical Notes
*
* Step1
When an error happens in the nth page of the Block ’ A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’ B’ )
* Step3
Then, copy the nth page data of the Block ’ A’ in the buffer memory to the nth page of the Block ’ B’ .
* Step4
Do not erase or program to Block ’ A’ by creating an ’ invalid Block’ table or other appropriate scheme.
Block Replacement
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
No
an error occurs.
K9F1G16Q0M
K9F1G16D0M
Read Status Register
Write Block Address
Erase Completed
Block A
Block B
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
(Continued)
1
2
Buffer memory of the controller.
No
16
Reclaim the Error
Read Flow Chart
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Write 30h
Start
Yes