K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 37

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
without latency. Power-On Auto Read mode is available only on 3.3V device(K9F1GXXU0M).
Figure 15. Power-On Auto-Read
V
CLE
CE
WE
ALE
PRE
R/B
RE
I/O
CC
X
K9F1G16Q0M
K9F1G16D0M
~ 1.8V
(3.3V device only)
t
R
37
cc.
Serial access may be done after power-on
1st
FLASH MEMORY
2nd
3rd
....
n th