K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 29

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Read ID Operation
90 ID : Access command = 90H
ID Defintition Table
CLE
CE
WE
ALE
RE
I/Ox
1
2
3
4
st
nd
rd
th
Byte
Byte
Byte
Byte
Read ID Command
90h
K9F1G16Q0M
K9F1G16D0M
Description
Maker Code
Device Code
Don’ t care
Page Size, Block Size, Spare Size, Organization,Serial access minimum
Address. 1cycle
K9F1G08Q0M
K9F1G16Q0M
K9F1G08D0M
K9F1G08U0M
K9F1G16D0M
K9F1G16U0M
00h
Device
t
REA
t
AR
Device Code*(2nd Cycle)
Maker Code Device Code
29
ECh
A1h
F1h
F1h
B1h
C1h
C1h
Device
Code*
XXh
FLASH MEMORY
4th Cycle*
15h
15h
15h
55h
55h
55h
4th cyc.*