K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 19

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K9F1G08D0M

Manufacturer Part Number
K9F1G08D0M
Description
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Command Latch Cycle
Address Latch Cycle
NOTE
CLE
CE
WE
ALE
K9F1G16X0M : I/O
K9F1G16X0M : I/O
CLE
CE
WE
ALE
K9F1G08X0M(X8 device)
K9F1G16X0M(X16 device)
I/Ox
I/Ox
Device
8
8
~
~
K9F1G16Q0M
K9F1G16D0M
15 must be set to "0"
15 must be set to "0"
t
CS
t
CLS
t
ALS
I/O 0 ~ I/O 15
I/O 0 ~ I/O 7
I/Ox
I/O
t
t
t
ALS
t
WP
CLS
CS
Col. Add1
t
DS
t
WC
t
t
ALH
DH
t
Data In/Out
WH
~1056word
~2112byte
t
WP
DATA
t
ALS
t
DS
Command
t
19
WP
Col. Add2
t
DS
t
t
t
DH
CLH
CH
t
t
WC
Col. Add1
ALH
t
t
ALH
A0~A7
A0~A7
DH
t
WH
t
ALS
Col. Add2
t
A8~A11
A8~A10
WP
Row Add1
t
DS
t
ADDRESS
WC
t
t
ALH
DH
FLASH MEMORY
t
WH
Row Add1
A12~A19
A11~A18
t
ALS
t
Row Add2
WP
t
DS
t
Row Add2
t
DH
A20~A27
A19~A26
ALH

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