K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 3

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
GENERAL DESCRIPTION
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300 s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or
word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin-
ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
- Memory Cell Array
- Data Register
- Page Program
- Block Erase
- Page Size
- Random Read : 25 s(Max.)
- Serial Access : 50ns(Min.)*
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
- Cache Register
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
- 2.65V device(K9F1GXXD0M) : 2.4~2.9V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
*K9F1GXXQ0M : 80ns
K9F1G08Q0M-Y,P
K9F1G16Q0M-Y,P
K9F1G08D0M-Y,P
K9F1G16D0M-Y,P
K9F1G08U0M-Y,P
K9F1G16U0M-Y,P
K9F1G08U0M-V,F
Part Number
K9F1G16Q0M
K9F1G16D0M
1.70 ~ 1.95V
Vcc Range
2.4 ~ 2.9V
2.7 ~ 3.6V
3
- Program time : 300 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- K9F1GXXX0M-YCB0/YIB0
- K9F1G08U0M-VCB0/VIB0
- K9F1GXXX0M-PCB0/PIB0
- K9F1G08U0M-FCB0/FIB0
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
Organization
X16
X16
X16
X8
X8
X8
X8
FLASH MEMORY
PKG Type
WSOP1
TSOP1
TSOP1
TSOP1