K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 11

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
DC AND OPERATING CHARACTERISTICS
NOTE : V
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operating
Current
IL
Parameter
can undershoot to -0.4V and V
Page Read with
Serial Access
Program
Erase
K9F1G16Q0M
K9F1G16D0M
Symbol
I
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
IH*
OH
LI
IL*
OL
1
2
3
1
2
IH
tRC=50ns, CE=V
I
CE=V
CE=V
WP=PRE=0V/V
V
V
K9F1GXXQ0M :I
K9F1GXXD0M :I
K9F1GXXU0M :I
K9F1GXXQ0M :I
K9F1GXXD0M :I
K9F1GXXU0M :I
K9F1GXXQ0M :V
K9F1GXXD0M :V
K9F1GXXU0M :V
OUT
IN
OUT
can overshoot to V
=0 to Vcc(max)
=0mA
=0 to Vcc(max)
Test Conditions
IH
CC
, WP=PRE=0V/V
-0.2,
-
-
-
-
CC
OH
OH
OH
OL
OL
OL
IL
OL
OL
OL
CC
=100 A
=2.1mA
=100uA
=-100 A
=-400 A
=-100 A
=0.1V
=0.4V
=0.1V
+0.4V for durations of 20 ns or less.
(Recommended operating conditions otherwise noted.)
CC
11
Min
V
-0.4
-0.3
-0.1
Vcc
3
CC
-
-
-
-
-
-
-
-
1.8V
Typ Max
10
8
8
8
4
-
-
-
-
-
-
-
+0.3
V
0.4
0.1
15
15
15
50
1
10
10
CC
-
-
V
Min
V
-0.4
-0.3
-0.4
CCQ
K9F1GXXX0M
3
CC
-
-
-
-
-
-
-
-
2.65V
Typ Max
10
10
10
10
4
-
-
-
-
-
-
-
FLASH MEMORY
+0.3
V
0.5
0.4
20
20
20
50
1
10
10
CC
-
-
Min
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
-
3.3V
Typ
10
10
10
10
10
-
-
-
-
-
-
-
+0.3
Max
V
0.8
0.4
20
20
20
50
1
10
10
CC
-
-
Unit
mA
mA
V
A