K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 39

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Rp value guidance
where I
Rp(max) is determined by maximum permissible limit of tr
Rp(min, 1.8V part) =
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
L
is the sum of the input currents of all devices tied to the R/B pin.
K9F1G16Q0M
K9F1G16D0M
100n
100n
100n
200n
200n
200n
300n
300n
V
V
V
300n
CC
CC
CC
(Max.) - V
(Max.) - V
(Max.) - V
I
I
I
OL
OL
OL
+ I
+ I
+ I
@ Vcc = 1.8V, Ta = 25
2.4
2.3
@ Vcc = 2.65V, Ta = 25
OL
OL
OL
1K
L
L
L
1.7
1K
1K
30
100
3.6
30
2.3
1.7
@ Vcc = 3.3V, Ta = 25
(Max.)
(Max.)
(Max.)
Ibusy
Ibusy
Ibusy
tf
tf
tf
tr
tr
tr
60
200
1.2
0.85
60
2K
1.1
2K
3.6
2K
2.3
1.7
=
=
=
39
Rp(ohm)
Rp(ohm)
Rp(ohm)
3mA + I
3mA + I
8mA + I
1.85V
300
90
0.75
2.5V
3.2V
0.8
3K
C , C
3K
3.6
3K
1.7
2.3
90
C , C
0.57
C , C
L
L
L
L
= 30pF
L
2.3
L
= 30pF
1.7
0.6
400
= 100pF
3.6
0.43
120
4K
120
4K
4K
0.55
2m
3m
1m
2m
2m
3m
1m
3m
1m
FLASH MEMORY