K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 16

• Manufacturer Part Number: K9K1G08U0M-YIB0
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
* Input Data Latch Cycle
ALE
CLE
CE
WE
I/O
CE
RE
I/O
R/B
* Serial Access Out Cycle after Read
0
0
~
~
7
7
t
ALS
NOTES : Transition is measured 200mV from steady state voltage with load.
t
RR
t
WP
t
This parameter is sampled and not 100% tested.
DS
DIN 0
t
t
WC
REA
t
DH
t
WH
Dout
t
RC
(CLE=L, WE=H, ALE=L)
t
REH
t
WP
t
DS
DIN 1
t
REA
16
t
DH
Dout
t
RHZ*
t
WP
DIN 511
t
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
CHZ*
RHZ*