K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 19

• Manufacturer Part Number: K9K1G08U0M-YIB0
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Page Program Operation
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
CLE
CE
WE
ALE
RE
I/O
R/B
Sequential Row Read Operation ( Within a Block )
CLE
CE
WE
ALE
RE
I/O
R/B
0
0
~
~
7
7
Sequential Data
Input Command
80h
00h
t
WC
A
0
Column
Address
A
~ A
0
M
~ A
7
A
7
9
A
~ A
9
~ A
1 6
A
1 6
1 7
Page(Row)
A
Address
~ A
t
17
WC
2 4
~ A
2 4
A
25,
A
A
2 6
25,
A
2 6
N
Busy
1 up to 528 Byte Data
Serial Input
19
Din
N
Dout
N
Ready
t
Output
WC
527
Din
Dout
N+1
M+1
Program
Command
10h
Dout
527
t
WB
Busy
FLASH MEMORY
t
PROG
Dout
0
Dout
Read Status
Command
I/O
I/O
1
0
0
=0 Successful Program
=1 Error in Program
70h
Dout
527
Output
I/O
0