K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 17

• Manufacturer Part Number: K9K1G08U0M-YIB0
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Read1 Operation
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
CLE
CE
WE
RE
I/O
CLE
CE
WE
ALE
RE
I/O
R/B
* Status Read Cycle
0
0
~
~
7
7
00h or 01h A
t
WC
(Read One Page)
Column
Address
0
~ A
7
A
9
~ A
t
CLS
1 6
t
CS
Page(Row)
Address
A
1 7
t
WP
t
~ A
DS
70h
2 4
t
t
t
CH
CLH
DH
A
25,
A
t
2 6
WB
17
Busy
t
t
RR
R
t
AR2
t
WHR
t
Dout N
CLR
t
IR
Dout N+1 Dout N+2
t
CEA
t
RC
t
REA
FLASH MEMORY
Status Output
t
t
RHZ*
CHZ*
Dout 527
t
RHZ
t
RB
t
CHZ
t
CEH
t
CRY