K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 20

• Manufacturer Part Number: K9K1G08U0M-YIB0
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

BLOCK ERASE OPERATION
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
CLE
CE
WE
ALE
RE
I/O
R/B
0
~
7
Auto Block Erase Setup Command
t
60h
WC
A
9
~ A
16
Page(Row)
A
Address
1 7
~ A
(ERASE ONE BLOCK)
24
A
25,
A
2 6
Erase Command
DOh
t
WB
20
Busy
t
BERS
Read Status
Command
FLASH MEMORY
70h
I/O
I/O
0
0
=0 Successful Erase
=1 Error in Erase
I/O 0