K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 36

• Manufacturer Part Number: K9K1G08U0M-YIB0
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Data Protection
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down. A recovery time of minimum 10 s is required before internal circuit gets ready for any command
sequences as shown in Figure 25. The two step command sequence for program/erase provides additional software protection.
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
Figure 25. AC Waveforms for Power Transition
WP
V
WE
CC
2.5V
10 s
High
36
FLASH MEMORY
2.5V
IL