ATMEGA128-16AU SL383 Atmel, ATMEGA128-16AU SL383 Datasheet - Page 292

• Manufacturer Part Number: ATMEGA128-16AU SL383
• Manufacturer: Atmel

Parallel
Programming
Enter Programming
Mode
Considerations for
Efficient Programming
Chip Erase
292
ATmega128
Table 124. No. of Words in a Page and no. of Pages in the Flash
Table 125. No. of Words in a Page and no. of Pages in the EEPROM
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5 - 5.5 V between V
2. Set RESET to “0” and toggle XTAL1 at least SIX times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
Note, if External Crystal or External RC configuration is selected, it may not be possible to apply
qualified XTAL1 pulses. In such cases, the following algorithm should be followed:
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Wait 100 µs.
4. Re-program the fuses to ensure that External Clock is selected as clock source
5. Exit Programming mode by power the device down or by bringing RESET pin to 0b0.
6. Entering Programming mode with the original algorithm, as described above.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or the EEPROM are
reprogrammed.
Note:
64K words (128K bytes)
EEPROM Size
ns.
has been applied to RESET, will cause the device to fail entering programming mode.
RESET.
(CKSEL3:0 = 0b0000) If Lock bits are programmed, a Chip Erase command must be
executed before changing the fuses.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value $FF, that is the contents of the entire EEPROM (unless the
EESAVE fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256-byte EEPROM. This consideration also applies to Signature bytes
reading.
4K bytes
Flash Size
1. The EEPRPOM memory is preserved during chip erase if the EESAVE fuse is programmed.
Page Size
8 bytes
Page Size
128 words
CC
CC
PCWORD
EEA[2:0]
Table on page 291
and GND, and wait at least 100 µs.
and GND simultaneously as 11.5 - 12.5V is applied to
Table 121 on page 291
PCWORD
PC[6:0]
No. of Pages
(1)
512
No. of Pages
memories plus Lock bits. The Lock bits are
to “0000”.
512
to “0000” and wait at least 100
EEA[11:3]
PCPAGE
PCPAGE
PC[15:7]
EEAMSB
PCMSB
8
15
2467S–AVR–07/09