MCIMX6S1AVM08ABR Freescale Semiconductor, MCIMX6S1AVM08ABR Datasheet - Page 63

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MCIMX6S1AVM08ABR

Manufacturer Part Number
MCIMX6S1AVM08ABR
Description
Processors - Application Specialized i.MX6 Solo rev 1.1
Manufacturer
Freescale Semiconductor
Type
Multimedia Applicationsr
Datasheet

Specifications of MCIMX6S1AVM08ABR

Rohs
yes
Core
ARM Cortex A9
Processor Series
i.MX6
Data Bus Width
32 bit
Maximum Clock Frequency
800 MHz
Data Ram Size
16 KB
Operating Supply Voltage
1.175 V to 1.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
MAPBGA-624
Interface Type
Parallel
Memory Type
L1/L2 Cache, ROM, SRAM
Minimum Operating Temperature
- 40 C
Number Of Timers
2
1
2
Figure
appear in
1
2
3
Freescale Semiconductor
All measurements are in reference to Vref level.
Measurements were done using balanced load and 25 Ω resistor from outputs to VDD_REF.
To receive the reported setup and hold values, write calibration should be performed in order to locate the DQS in the middle
of DQ window.
All measurements are in reference to Vref level.
Measurements were done using balanced load and 25 Ω resistor from outputs to VDD_REF.
DDR17
DDR18
DDR21
DDR22
DDR23
ID
25shows the DDR3/DDR3L write timing parameters. The timing parameters for this diagram
Table
DQM (output)
DQS (output)
DQ and DQM setup time to DQS (differential strobe)
DQ and DQM hold time to DQS (differential strobe)
DQS latching rising transitions to associated clock edges
DQS high level width
DQS low level width
DQ (output)
CK_B
i.MX 6Solo/6DualLite Automotive and Infotainment Applications Processors, Rev. 1
46.
CK
DDR17
DDR21
DDR17
Figure 25. DDR3/DDR3L Write Cycle
Table 46. DDR3/DDR3L Write Cycle
Parameter
Data
DM
DDR18
DDR18
Data
DM
DDR17
DDR17
Data
DM
DDR22
Data
DM
DDR23
DDR18
DDR18
Data
DM
Symbol
t
t
t
DQSS
DQSH
DQSL
t
t
DS
DH
Data
DM
Electrical Characteristics
CK = 400 MHz
-0.25
0.45
0.45
Min
420
345
Data
DM
+0.25
Data
DM
Max
0.55
0.55
Unit
tCK
tCK
tCK
ps
ps
63

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