IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 13

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

Configuration Registers Operation
Access Using ZZ#
Figure 5: Load Configuration Register Operation Using ZZ#
Rev. A | Feb. 2012
Address
The configuration register (CR) defines how the PSRAM device performs a transparent self refresh.
Altering the refresh parameters can dramatically reduce current consumption during standby mode.
Page mode controls is embedded in the CR. This register can be updated any time the device is
operating in a standby state. The control bits used in the CR are shown in Table 3. At power-up,
the CR is set to 0070h.
The CR can be loaded using a WRITE operation immediately after ZZ# makes a HIGH-to-LOW
transition (see Figure 5). The values placed on addresses A[19:0] are latched into the CR on the
rising edge of CE# or WE#, whichever occurs first. LB#/UB# are “Don’t Care.” Access using ZZ#
is WRITE only.
WE#
CE#
ZZ#
t < 500ns
www.issi.com
ADDRESS
VALID
- [e-mail]
IS66WVE1M16BLL
13