IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 7

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

Functional Description
Power-Up Initialization
Figure 1: Power-Up Initialization Timing
Rev. A | Feb. 2012
In general, this device is high-density alternatives to SRAM and Pseudo SRAM products popular
in low-power, portable applications.
The 16Mb device contains a 16,777,216-bit DRAM core organized as 1,048,576 addresses by
16 bits. This device include the industry-standard, asynchronous memory interface found on
other low-power SRAM or PSRAM offerings
Page mode access is also supported as a bandwidth-enhancing extension to the asynchronous
read protocol.
PSRAM products include an on-chip voltage sensor that is used to launch the power-up
initialization process. Initialization will load the CR with its default settings (see Table 3).
VDD and VDDQ must be applied simultaneously. When they reach a stable level above
2.7V, the device will require 150μs to complete its self-initialization process ( see Figure 1).
During the initialization period, CE# should remain HIGH. When initialization is complete,
the device is ready for normal operation.
VDD
VDDQ
VDD=2.7V
www.issi.com
Device Initialization
tPU > 150us
- [e-mail]
Device ready for
normal operation
IS66WVE1M16BLL
7