IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 2

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IS66WVE1M16BLL-55BLI-TR

Manufacturer Part Number
IS66WVE1M16BLL-55BLI-TR
Description
SRAM 16Mb 1M x 16 55ns Pseudo SRAM
Manufacturer
ISSI
Datasheet

Specifications of IS66WVE1M16BLL-55BLI-TR

Rohs
yes
Memory Size
16 Mbit
Organization
1 Mbit x 16
Access Time
55 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
35 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
BGA-48
Memory Type
Psuedo
Factory Pack Quantity
2500
Rev. A | Feb. 2012
General Description
WE#
OE#
UB#
CE#
LB#
ZZ#
A0~A19
PSRAM products are high-speed, CMOS pseudo-static random access memory developed
for low-power, portable applications. The 16Mb DRAM core device is organized
as 1 Meg x 16 bits. These devices include the industry-standard, asynchronous memory
interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings.
For seamless operation on an asynchronous memory bus, PSRAM products incorporated a
transparent self-refresh mechanism. The hidden refresh requires no additional support
from the system memory controller and has no significant impact on device read/write
performance.
A user-accessible configuration registers (CR) defines how the PSRAM device performs on-
chip refresh and whether page mode read accesses are permitted. This register is
automatically loaded with a default setting during power-up and can be updated at any
time during normal operation.
Special attention has been focused on current consumption during self-refresh. This
product includes two system-accessible mechanisms to minimize refresh current.
Setting sleep enable (ZZ#) to LOW enables one of two low-power modes: partial-array
refresh (PAR) or deep power-down (DPD). PAR limits refresh to only that part of the
DRAM array that contains essential data. DPD halts refresh operation altogether and is
used when no vital information is stored in the device. The system-configurable refresh
mechanisms are accessed through the CR.
Control
Logic
Configuration Register
Decode Logic
Address
[ Functional Block Diagram]
www.issi.com
(CR)
- SRAM@issi.com
Memory Array
1024K X 16
DRAM
IS66WVE1M16BLL
/Output
Buffers
Input
Mux
And
DQ0~DQ15
2

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