IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 21

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

Table 9 . Asynchronous WRITE Cycle Timing Requirements
Rev. A | Feb. 2012
Symb
Notes:
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
WPH
t
CPH
ol
DW
OW
AW
BW
CW
WC
WP
WR
DH
AS
LZ
1. Low-Z to High-Z timings are tested with the circuit shown in Figure 9. The
2. High-Z to Low-Z timings are tested with the circuit shown in Figure 9. The
3. WE# LOW must be limited to t
Address setup Time
Address valid to end of write
Byte select to end of write
CE# HIGH time during write
Chip enable to end of Write
Data hold from write time
Data write setup time
Chip enable to Low-Z output
End write to Low-Z output
Write cycle time
Write to High-Z output
Write pulse width
Write pulse width HIGH
Write recovery time
High-Z timings measure a 100mV transition from either VOH or VOL toward VDDQ/2.
Low-Z timings measure a 100mV transition away from the High-Z (VDDQ/2) level toward
either VOH or VOL.
Parameter
CEM
www.issi.com
(8us)
Min
55
55
55
23
10
55
46
10
0
5
0
5
0
-55
- [e-mail]
Max
8
Min
70
70
70
23
10
70
46
10
0
5
0
5
0
-70
Max
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
IS66WVE1M16BLL
Notes
1
1
2
3
21