IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 6

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

Configuration
No operation
Functional Description
Notes
Table 2. Functional Descriptions
Rev. A | Feb. 2012
Standby
register
Mode
Write
Read
Load
DPD
PAR
All functions for the device are listed below in Table 2.
1. When UB# and LB# are in select mode (LOW), DQ0~DQ15 are affected as shown.
2. When the device is in standby mode, control inputs (WE#, OE#), address inputs, and data
3. When WE# is active, the OE# input is internally disabled and has no effect on the I/Os.
4. The device will consume active power in this mode whenever addresses are changed.
5. Vin=VDDQ or 0V, all device pins be static (unswitched) in order to achieve standby current.
6. DPD is enabled when configuration register bit CR[4] is “0”; otherwise, PAR is enabled.
When only LB# is in select mode, DQ0~DQ7 are affected as shown. When only UB# is
in select mode, DQ8~DQ15 are affected as shown.
inputs/outputs are internally isolated from any external influence.
Standby
Power
Active
Active
Active
DPD
PAR
Idle
CE#
H
H
H
L
L
L
L
WE#
www.issi.com
H
X
L
X
X
X
L
OE#
X
X
X
X
X
X
L
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UB#/LB#
X
X
X
X
X
L
L
ZZ#
H
H
H
H
L
L
L
Data-Out
Data-In
[15:0]
High-Z
High-Z
High-Z
High-Z
DQ
X
4
IS66WVE1M16BLL
1,3,4
Note
2,5
1,4
4,5
6
6
6