IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 5

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

Signal Descriptions
Table 1. Signal Descriptions
Rev. A | Feb. 2012
DQ0~DQ15
A0~A19
Symbol
VDDQ
VSSQ
WE#
UB#
OE#
VDD
CE#
LB#
ZZ#
VSS
All signals for the device are listed below in Table 1.
Input / Output
Power Supply
Power Supply
Power Supply
Power Supply
Input
Input
Input
Input
Input
Input
Input
Type
Core Power supply (2.7V~3.6V)
I/O Power supply (2.7V~3.6V)
All VSS supply pins must be connected to Ground
All VSSQ supply pins must be connected to Ground
Data Inputs/Outputs (DQ0~DQ15)
Address Input(A0~A19)
Lower Byte select
Upper Byte select
Chip Enable/Select
Output Enable
Write Enable
Sleep enable : When ZZ# is LOW, the CR can be loaded, or the device
can enter one of two low-power modes ( DPD or PAR).
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Description
IS66WVE1M16BLL
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