IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 20

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

AC Characteristics
Table 8 . Asynchronous READ Cycle Timing Requirements
Rev. A | Feb. 2012
Notes:
Sym
t
t
t
t
t
t
bol
t
t
t
t
t
t
t
t
t
CEM
OHZ
APA
BHZ
OLZ
BLZ
CO
OH
AA
BA
HZ
OE
RC
LZ
PC
1. Low-Z to High-Z timings are tested with the circuit shown in Figure 9. The High-Z timings
2. High-Z to Low-Z timings are tested with the circuit shown in Figure 9. The Low-Z timings
3. Page mode enable only.
Address Acess Time
Page access Time
LB# /UB# access Time
LB#/UB# disable to High-Z
output
LB#/UB# enable to Low-Z
output
Maximum CE# pulse width
Chip select access time
Chip disable to High-Z output
Chip enable to Low-Z output
Output enable to valid output
Output hold from address
change
Output disable to High-Z output
Output enable to Low-Z output
Page cycle time
Read cycle time
measure a 100mV transition from either VOH or VOL toward VDDQ/2.
measure a 100mV transition away from the High-Z (VDDQ/2) level toward either VOH or VOL.
Parameter
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Min
10
10
20
55
5
3
-55
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Max
55
20
55
55
20
8
8
8
8
Min
10
10
20
70
5
3
-70
Max
70
20
70
70
20
8
8
8
8
IS66WVE1M16BLL
Unit
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
2
2
3
2
1
20