IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 8

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

Bus Operating Modes
Asynchronous Mode Operation
Rev. A | Feb. 2012
Figure 2. Asynchronous Read Operation
UB#/LB#
Address
DQ15
DQ0-
WE#
OE#
CE#
PSRAM products incorporates the industry-standard, asynchronous interface. This bus interface
supports asynchronous Read and WRITE operations as well as page mode READ operation for
enhanced bandwidth. The supported interface is defined by the value loaded into the CR.
PSRAM products power up in the asynchronous operating mode. This mode uses the industry-
standard SRAM control interface (CE#, OE#, WE#, and LB#/UB#).
READ operations are initiated by bringing CE#, OE#, and LB#/UB# LOW while keeping WE# HIGH
(see Figure 2). Valid data will be driven out of the I/Os after the specified access time has elapsed.
WRITE operations occur when CE#,WE#, and LB#/UB# are driven LOW (see Figure 3). During
WRITE operations, the level of OE# is a “Don’t Care”; WE# overrides OE#. The data to be written is
latched on the rising edge of CE#, WE#, or LB#/UB#, whichever occurs first. WE# LOW time must be
limited to tCEM.
www.issi.com
t
RC
= READ cycle Time
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