NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 20

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Bus operations
20/72
Table 7.
1. Any additional address input cycles are ignored.
2. A29 is only valid for the NAND08G-BxC devices.
Table 8.
Table 9.
cycle
Bus
2
3
1
4
5
nd
rd
th
th
st
(1)
Address insertion (x16 devices)
Address definition (x8 devices)
Address definition (x16 devices)
I/O7
A18
A26
V
V
A7
IL
IL
A12 - A17
A18 - A29
A18 - A30
A11 - A16
A17 - A28
A17 - A29
Address
Address
A0 - A11
A0 - A10
A18 = 0
A18 = 1
A17 = 0
A17 = 1
I/O6
A17
A25
V
V
A6
IL
IL
I/O5
A16
A24
V
V
A5
IL
IL
I/O4
A15
A23
V
V
A4
IL
IL
I/O3
A14
A22
Block address (NAND04G-B2D)
Block address (NAND08G-BxC)
Block address (NAND08G-BxC)
V
V
A3
Block address(NAND04G-B2D)
IL
IL
NAND04G-B2D, NAND08G-BxC
Column address
Column address
Page address
Second plane
Page address
Second plane
A29
Definition
First plane
Definition
First plane
I/O2
A10
A13
A21
A2
(2)
I/O1
A12
A20
A28
A1
A9
I/O0
A11
A19
A27
A0
A8