NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 22

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device operations
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Device operations
This section provides details of the device operations.
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode, the
Read command must be issued (see
Random read
Each time the Read command is issued, the first read is random read.
Page read
After the first random read access, the page data (2112 bytes or 1056 words) are
transferred to the page buffer in a time of t
complete, the Ready/Busy signal goes High. The data can then be read sequentially (from
selected column address to last column address) by pulsing the Read Enable signal.
The device can output random data in a page, instead of consecutive sequential data, by
issuing a Random Data Output command. The Random Data Output command can be used
to skip some data during a sequential data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command. The Random
Data Output command can be issued as many times as required within a page.
The Random Data Output command is not accepted during cache read operations.
Table 10:
WHBH
Commands).
(see
Table
NAND04G-B2D, NAND08G-BxC
31). Once the transfer is