NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 52

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
Figure 23. Equivalent testing circuit for AC characteristics measurement
Table 28.
1. Standby and leakage currents refer to a single die device. For a multiple die device, their value must be multiplied for the
52/72
I
Symbol
OL
V
I
I
I
I
V
V
number of dice of the stacked device, while the active power consumption depends on the number of dice concurrently
executing different operations.
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
DC characteristics (1.8 V devices)
V
DD
Operating
Standby current (CMOS)
Output high voltage level
Output low voltage level
Output low current (RB)
Output leakage current
current
Input leakage current
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Parameter
Sequential
Program
NAND Flash
Erase
read
C L
V
E=V
V
OUT
Test conditions
t
IN
I
RLRL
I
GND
OH
(1)
E=V
= 0 to V
OL
V
WP=0/V
IL,
= 0 to V
OL
= -100 µA
I
= 100 µA
OUT
minimum
= 0.1 V
DD
–
–
–
–
–
-0.2,
DD
= 0 mA
DD
DD
max
max
V DD
GND
0.8 * V
V
2R ref
2R ref
DD
Min
-0.3
–
–
–
–
–
–
–
3
–
- 0.1
NAND04G-B2D, NAND08G-BxC
DD
Ai11085
Typ
10
10
10
10
–
–
–
–
–
–
–
–
V
0.2 * V
DD
Max
±10
±10
0.1
1.1
20
20
20
50
–
4
+ 0.3
DD
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V