NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 25

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND04G-B2D, NAND08G-BxC
Figure 9.
Figure 10. Cache read (random) operation
I/O0-7
RB
R
I/O0-7
RB
R
Read
Setup
Code
00h
Read
Setup
Code
After the Sequential Cache Read or Random Cache Read command has been issued, the
Ready/Busy signal goes Low and the status register bits are set to SR5 =' 0' and SR6 ='0'
for a period of cache read busy time, t
cache register.
After the cache read busy time has passed, the Ready/Busy signal goes High and the status
register bits are set to SR5 = '0' and SR6 = '1', signifying that the cache register is ready to
download new data. Data of the previously read page can be output from the page buffer by
toggling the Read Enable signal. Data output always begins at column address 00h, but the
Random Data Output command is also supported.
Cache read (sequential) operation
00h
Address
Inputs
Address
Inputs
(Read Busy time)
tBLBH1
(Read Busy time)
tBLBH1
Read
Code
30h
Read
Code
30h
Busy
Busy
(Read Cache Busy time)
Cache
Read
Sequential
Code
Repeat as many times as ncessary.
Read
Setup
Code
00h
31h
tRCBSY
Repeat as many times as ncessary.
Address
(Read Cache Busy time)
Inputs
RCBSY
tRCBSY
Enhanced
Cache
Read
(random)
Code
, while the device copies the next page into the
Outputs
31h
(Read Cache Busy time)
Data
tRCBSY
Outputs
Data
Exit
Cache
Read
Code
(Read Cache Busy time)
3Fh
tRCBSY
Exit
Cache
Read
Code
3Fh
Outputs
Device operations
Data
Outputs
Data
ai13176c
ai13176b
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