NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 66

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
Figure 42. Resistor value versus waveform timings for ready/busy signal
1. T = 25 °C.
12.2
Figure 43. Data protection
66/72
Data protection
The Numonyx NAND devices are designed to guarantee data protection during power
transitions.
A V
In the V
low (V
figure.
V DD
W
DD
IL
detection circuit disables all NAND operations, if V
DD
) to guarantee hardware protection during power transitions as shown in the below
Nominal Range
range from V
V LKO
Locked
LKO
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
NAND04G-B2D, NAND08G-BxC
is below the V
Ai11086
LKO
threshold.