NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 39

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND04G-B2D, NAND08G-BxC
6.14
Table 16.
1. For NAND08G-B4C devices, each 4-Gbit die returns its own electronic signature.
Table 17.
NAND08GW3B4C
NAND08GR3B4C
NAND04GW3B2D
NAND04GW4B2D
NAND08GW3B2C
NAND08GW4B2C
Root part number
NAND04GR3B2D
NAND04GR4B2D
NAND08GR3B2C
NAND08GR4B2C
I/O1-I/O0
I/O3-I/O2
I/O5-I/O4
I/O6
I/O7
I/O
Read electronic signature
The devices contain a manufacturer code and device code. The following three steps are
required to read these codes:
1.
2.
3.
The device remains in this state until a new command is issued.
Electronic signature
Electronic signature byte 3
(1)
One bus write cycle to issue the Read Electronic Signature command (90h)
One bus write cycle to input the address (00h)
Five bus read cycles to sequentially output the data (as shown in
signature).
(1)
Number of simultaneously
Interleaved programming
between multiple devices
Byte 1
0020h
0020h
0020h
0020h
Internal chip number
programmed pages
20h
20h
20h
20h
Cache program
Definition
Cell type
Byte 2
CCh
ACh
DCh
BCh
A3h
D3h
B3h
C3h
(see
Byte 3
Table
Value
10h
10h
10h
10h
51h
51h
51h
51h
0 0
0 1
1 0
1 1
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0 0
0
1
0
1
17)
(see
Byte 4
Table
D5h
D5h
55h
15h
95h
55h
15h
95h
18)
Table 16: Electronic
Not supported
Not supported
Description
Device operations
16-level cell
2-level cell
4-level cell
8-level cell
Supported
Supported
(see
1
2
4
8
1
2
4
8
Byte 5
Table
54h
54h
54h
54h
58h
58h
58h
58h
39/72
19)