NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 65

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND04G-B2D, NAND08G-BxC
12.1
Ready/busy signal electrical characteristics
Figure
signal. The value required for the resistor R
This is an example for 3 V devices:
where I
max is determined by the maximum value of t
Figure 40. Ready/busy AC waveform
Figure 41. Ready/busy load circuit
41,
L
is the sum of the input currents of all the devices tied to the ready/busy signal. R
Figure 40
and
Figure 42
ready V DD
DEVICE
V SS
V DD
R P min
R P min
t f
show the electrical characteristics for the ready/busy
=
V OL
(
-------------------------------------------------------------
V DDmax V OLmax
=
P
-------------------------- -
8mA
I OL
busy
can be calculated using the following equation:
R P
r
3.2V
.
Open Drain Output
RB
–
+
+
I L
I L
t r
)
ibusy
V OH
AI07563B
NI3087B
DC and AC parameters
65/72
P