MT48H4M16LFB4-75:H TR Micron Technology Inc, MT48H4M16LFB4-75:H TR Datasheet - Page 33

• Manufacturer Part Number: MT48H4M16LFB4-75:H TR
• Description: IC SDRAM 64MBIT 133MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-75:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1392-2

Figure 29:
Figure 30:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
WRITE with Auto Precharge Interrupted by a READ
WRITE with Auto Precharge Interrupted by a WRITE
Note:
Note:
Internal
States
Internal
States
DQM is LOW.
DQM is LOW.
Command
Command
Bank m
Address
Bank m
Bank n
Address
Bank n
CLK
CLK
DQ
DQ
Page active
Page active
T0
NOP
T0
NOP
WRITE - AP
Write - AP
Bank n ,
Bank n,
Page active
Bank n
Page active
Bank n
Col a
Col a
T1
D
T1
D
a
a
IN
IN
WRITE with BL = 4
WRITE with BL = 4
33
a + 1
T2
a + 1
T2
D
D
NOP
NOP
IN
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank m,
Read - AP
T3
a + 2
T3
Col d
Bank m
D
NOP
IN
Interrupt burst, Write-back
t
64Mb: 4 Meg x 16 Mobile SDRAM
READ with BL = 4
WR - Bank n
Bank m ,
WRITE - AP
Transitioning Data
Transitioning Data
Col d
Bank m
T4
T4
CL = 3 (Bank m)
D
NOP
Interrupt Burst, write-back
t
d
IN
WR - Bank n
WRITE with BL = 4
T5
T5
d + 1
NOP
NOP
D
IN
Precharge
t
RP - Bank n
©2006 Micron Technology, Inc. All rights reserved.
T6
T6
NOP
d + 2
D
D
NOP
t
OUT
d
Precharge
RP - Bank n
IN
Don’t Care
Don’t Care
T7
d + 3
T7
NOP
d + 1
D
D
NOP
t
t
WR - Bank m
IN
OUT
RP - Bank m
W rite-bank
Operations