MT48H4M16LFB4-75:H TR Micron Technology Inc, MT48H4M16LFB4-75:H TR Datasheet - Page 54

• Manufacturer Part Number: MT48H4M16LFB4-75:H TR
• Description: IC SDRAM 64MBIT 133MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-75:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1392-2

Figure 41:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
BA0, BA1
DQM
CLK
A10
CKE
DQ
t CMS
t CKS
Alternating Bank Read Accesses
t AS
t AS
t AS
ACTIVE
Bank 0
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD - Bank 0
t RAS - Bank 0
t
t
RC - Bank 0
RRD
t CK
T1
NOP
1. For this example, the BL = 4, and the CL = 2.
2. A8, A9, and A11 = “Don’t Care.”
Enable auto precharge
t CMS
t CL
Column m
Bank 0
T2
READ
t CMH
t CH
2
CAS latency - Bank 0
T3
NOP
t LZ
t AC
Bank 3
ACTIVE
T4
Row
Row
D
54
OUT
t OH
t AC
m
t RCD - Bank 3
D
T5
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
m + 1
t OH
t AC
64Mb: 4 Meg x 16 Mobile SDRAM
Enable auto precharge
Column b 2
Bank 3
D
T6
READ
OUT
m + 2
t OH
t AC
CAS latency - Bank 3
t RP - Bank 0
D
T7
OUT
NOP
m + 3
t OH
t AC
©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Bank 0
T8
ACTIVE
Row
Row
D
Don’t Care
Undefined
OUT
t RCD - Bank 0
t OH
t AC
b