MT48H4M16LFB4-75:H TR Micron Technology Inc, MT48H4M16LFB4-75:H TR Datasheet - Page 39

• Manufacturer Part Number: MT48H4M16LFB4-75:H TR
• Description: IC SDRAM 64MBIT 133MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-75:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1392-2

Electrical Specifications
Table 9:
Table 10:
Table 11:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
Parameter
Voltage on V
Voltage on any ball relative to V
Storage temperature (plastic)
Parameter/Condition
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage: all inputs: I
Input low voltage: all inputs: I
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ disabled; 0V ≤ V
Operating temperature
Commercial
Industrial
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
DD
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 43 and 44; V
AC Electrical Characteristics and Operating Conditions
V
DD
/V
IN
DD
/V
≤ V
DD
Q supply relative to V
Q = 1.7–1.95V
DD
(All other pins not under test = 0V)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
OUT
SS
OUT
= 100µA
= -100µA
SS
/V
OUT
SS
Q
≤ V
DD
Q
39
DD
Symbol
/V
V
V
Symbol
Symbol
DD
V
V
V
DD
V
DD
V
I
T
OZ
OH
DD
I
OL
IH
A
T
IL
I
V
V
V
Q = 1.7–1.95V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
/V
STG
Q
IH
IL
IN
DD
Q
64Mb: 4 Meg x 16 Mobile SDRAM
0.8 × V
0.9 × V
Min
–0.3
–1.0
–1.5
–40
1.7
1.7
–0.35
–0.35
0
–
Min
–55
DD
DD
Min
1.4
Q V
Q
–
Electrical Specifications
DD
Max
+0.3
+1.0
+1.5
Max
+150
1.95
1.95
+2.8
+2.8
+70
+85
Q + 0.3
0.2
–
©2006 Micron Technology, Inc. All rights reserved.
Max
0.4
–
Units
µA
µA
°C
V
V
V
V
V
V
Units
°C
V
V
Units
Notes
V
V
22
22